BLF6G22LS-75,118 datasheet

Manufacturer NXP Semiconductors
Description Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13"
Datasheet Type Original
ECAD Model
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BLF6G22LS-75 BLF6G22LS-75,112
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BLF6G22LS-75,118 datasheet preview Download Datasheet