BLS3135-10 TRAY datasheet by NXP Semiconductors

Description Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 10 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

BLS3135-10 TRAY datasheet preview Download Datasheet