BLS6G3135-20,112 datasheet by NXP Semiconductors

Description LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB; Package: SOT608A (CDFM2); Container: Blister pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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BLS6G3135-20 BLS6G3135-20

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