BUK7E2R7-30B,127 datasheet by NXP Semiconductors

Description Trenchmos standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 29 nC; R<sub>DS(on)</sub>: 2.7@10V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 30 V; Package: SOT226 (I2PAK); Container: Horizontal, Rail Pack
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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BUK7E2R7-30B BUK7E2R7-30B

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