BUK9Y19-55B,115 datasheet by NXP Semiconductors

Description N-channel TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 44 A; Q<sub>gd</sub> (typ): 8 nC; R<sub>DS(on)</sub>: 17@10V19@5V21@4.5V mOhm; Thermal Resistance: 2 K/W; V<sub>DS</sub>max: 55 V; Package: SOT669 (LFPAK); Container: Tape reel smd
Datasheet Type Original
RoHS Yes
Pb Free Unknown
Lifecycle Transferred
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BUK9Y19-55B BUK9Y19-55B

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