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MG300Q1US11
datasheet
by Toshiba
Description
V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switchi
...
ng and motor control applications
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Datasheet Type
Scan
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Obsolete
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MG300Q1US11
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