MG30G6EL2 datasheet by Toshiba

Description V(cbo): 600V V(ceo): 450V V(cex): 600V V(ebo): 6V 30A 200W silicon NPN triple diffused transistor. For high power switching applications, motor control applications
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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MG30G6EL2 datasheet preview Download Datasheet