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    PH2925UT/R datasheet by NXP Semiconductors

    • N-channel TrenchMOS ultra low level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 100 A; Q<sub>gd</sub> (typ): 20.2 nC; R<sub>DS(on)</sub>: 3.0@4.5V mOhm; V<sub>DS</sub>max: 25 V
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