PHN210T datasheet by NXP Semiconductors

Description PHN210T - Dual N-channel enhancement mode TrenchMOS transistor - Configuration: Dual N-channel ; ID DC: 3.4 A; Qgd (typ): 0.7 nC; RDS(on): 100@10V200@4.5V mOhm; VDSmax: 30 V
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
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