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YTFP250
datasheet
by Toshiba
Description
V(dsx): 200V V(dgr): 200V V(gss): 20V 150W silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications
Datasheet Type
Scan
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Obsolete
Price & Stock
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YTFP250
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