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Partial File Text ï»¿TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 6 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS â¢ High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) â¢
Datasheet Type Scan
RoHS No
Pb Free No
Lifecycle Obsolete

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2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y