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DSA0098784.pdf
by ON Semiconductor
Partial File Text
MBR3100 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial const
Datasheet Type
Original
RoHS
No
Pb Free
Unknown
Lifecycle
Obsolete
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User Tagged Keywords
MBR3100
MBR3100G
MBR3100RL
MBR3100RLG
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