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Scans-0093716.pdf
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TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 2SB1495 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm · · · High DC Current Gain : hFE = 2000 (Min.) (VCE= -2 V , IC= -2
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2SB1495
2SD2257
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