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    • TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 2SB1495 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm · · · High DC Current Gain : hFE = 2000 (Min.) (VCE= -2 V , IC= -2
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    2SB1495 2SD2257
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