DSAHI00055732.pdf by Fairchild Semiconductor

Partial File Text HGTG30N60B3 Data Sheet April 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The
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G30N60B3 TA49170