DSA00307598.pdf by Hynix Semiconductor

Partial File Text HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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