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    DSAZIHA1000158022.pdf

    • RF Micro Devices
    • PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET (SSFET) GaN HEMT providing the same insulated gate e
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