DSA0096344.pdf by Toshiba

Partial File Text TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz · High gain - G1dB = 6.0 dB at 7.7 GHz to
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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