DSA0096320.pdf by Toshiba

Partial File Text TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz · High gain - G1dB = 5.5 dB at 7.1 GHz t
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