DSA0096303.pdf by Toshiba

Partial File Text TOSHIBA TIM6472-30SL MICROWAVE POWER GaAs FET Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level · High power - P1dB = 45 dBm at 6.4 GHz to 7.2
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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