DSA00156219.pdf by Fairchild Semiconductor

Partial File Text SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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