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DSAEDA00039308.pdf
by Fairchild Semiconductor
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FDMS8622 N-Channel Power Trench® MOSFET 100 V, 16.5 A, 56 mΩ Features General Descripti
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on Ì Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A Ì High performance trench technology for extrem
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Pb Free
Unknown
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