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    • • S/— h MOS Field Effect Transistor 2SK1959 N I-^ÌV MOS FET 2SK1959Ü1.5 vmW]?J f-^ ^SÉ^ MOS FETT" it o r-K £1.5 V TM]x®JT' ë £ o O ^o RDS(on) = 3.2 Q MAX. @VGS = 1.5V, ID = 50m
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