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    • =T—S • 5/—h MOS Field Effect Power Transistor N^-^U-'^-MOS FET iiffl 2SK826Ü, Nl-vì^U-J^y^yZSyì-ìfp-tV-MOS FET Tt >mmsî& < , X A .y f - > £ 9 , ÛSUî&X y( m wl OVDSS=450 V, ID(DC)
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