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â5> ⢠2/â h
Compound Transistor
GAI F4N
ft it
O r XÃÃÃTL £ 1*1/1 L T ^ £ to (Ri = 22 kÃ, R2 = 47 kÃ)
iC
OGN1F4N t ~7° I) S > ? >) TitmTè & 1~c (Ta = 25 °C)
II s K& SE fë
