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Scans-0088157.pdf
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⢠2/â h Compound Transistor GAI F4M n m o '<iT xiSia è L T^ £ 1"â (Ri =22 kQ , R2 = 22 ki2 ) o GN1F4M t ^ > 7° U / > ^ <) Tt-Sim Tè à , (Ta = 25 °C ) ⦠PWS10 ms. Duty CycleS
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ECAD Model
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Transistor NP 3773