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5sâS ' '5/âh
Compound Transistor
FN1L3Z
SÃ)lF*3 MPNPni bf?* JUMìsl) â¡ V
# m
(Ri = 4.7 kQ)
C
B
OâVW" R.
ÃE
o FA1L3Z t 3 > 7° "J y > 9 'J TfëmX'% £ t (Ta = 25 °C )
II