DSAEDA00039024.pdf by Fairchild Semiconductor
- FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features General Description Ì Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFET
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