GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF (TYP) HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz Lgi = 1
Scan
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Findchips