DSAE0025081.pdf by Toshiba

Partial File Text SSM3K311T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K311T High-Speed Switching Applications Unit: mm 4 V drive · Low ON-resistance: Ron = 43m (max) (@VGS = 4V)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete
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kdr 5000 SSM3K311T