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Silicon Transistor
2SD1779
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O ^hFE~cL^ t)iSVCE(sat) Ti"'J h > h 7 > ^X ^<r>-; %kt ItfStto hFE = 800~3200 (at VCE = 5.0 V, Ic = 1.0 A) VCE(sat) = 0.2 V TYP. (at Ic = 1.0 A, IB = 10 mA)
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