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DSA00484153.pdf
Manufacturer
Microsemi
Partial File Text
APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime
Datasheet Type
Original
ECAD Model
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