DSAEDA00035885.pdf by ON Semiconductor

Partial File Text NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, NâChannel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped pr
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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