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DSA00300398.pdf
Manufacturer
California Eastern Laboratories
Partial File Text
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz ·
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
NEC NESG2101M05
NESG2101M05
NESG2101M05-T1
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