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    DSAH00170680.pdf

    • Fairchild Semiconductor
    • FCP190N60E / FCPF190N60E N-Channel MOSFET March 2012 FCP190N60E / FCPF190N60E 600V N-Channel MOSFET Features · 650V @TJ = 150°C · Max. RDS(on) = 190m · Ultra Low Gate Charge (Typ. Qg = 63nC)
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