DSAH00159295.pdf by Elite Semiconductor Memory Technology
- ESMT Flash FEATURES (Preliminary) F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Registe
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