DSASW00214396.pdf by IXYS

Partial File Text DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications VDSS Test Conditions VDSS TJ = 25°C to 1
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DE-375-102N10 DE375-0001 DE375-102N10A nec 2401

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