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DSASW00214308.pdf
Manufacturer
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Partial File Text
EPE Conference, Lausanne, 1999 IXAN0041 1 Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH Postfach 1180 68619 Lampertheim, Germany
Datasheet Type
Original
ECAD Model
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2a 200v schottky diode
DGS10-018A
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DGSK40-018A
DGSK40-025A
IXAN0041
IXYSVUM25-E
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ST Low Forward Voltage Schottky Diode