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    DSADIGA000125867.pdf by International Rectifier

    • IRFH7911PbF HEXFET® Power MOSFET VDS Q1 30 Q2 30 V RDS(on) max 8.6 3.0 m (@VGS = ... 10V) Qg (typical) ID Ã : 8.3 nC 13 (@TA = 25°C) 34 28 A more
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