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    DSA00103019.pdf

    • Fairchild Semiconductor
    • SSP6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V n Avalanche Rugged Technology RDS(on) = 2.0 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 6 A n Improved G
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    SSP6N80A

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