DSAE007433.pdf by Infineon Technologies

Partial File Text IPB027N10N3 G OptiMOS®3 Power-Transistor Product Summary Features V DS 2.7 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal lev
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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