DSASW00145665.pdf

Partial File Text 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior M
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Class E amplifier GaN amplifier Gan hemt transistor inp hemt power amplifier InP transistor HEMT NONLINEAR MODEL LDMOS pHEMT transistor varian visitor