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DSASW00208647.pdf
by Infineon Technologies
Partial File Text
IPP180N10N3 G IPI180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 18 m ID · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max TO-263 ·
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Unknown
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Unknown
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User Tagged Keywords
180N10N
IEC61249-2-21
IPI180N10N3
IPI180N10N3 G
IPP180N10N3
PG-TO220-3