DSAAQ0030452.pdf by Infineon Technologies

Partial File Text IPP114N12N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C operating temperature · Pb-
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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