DSA00175076.pdf by Fujitsu

Partial File Text FLC307XP GaAs FET & HEMT Chips FEATURES · · · · High Output Power: P1dB = 34.8dBm(Typ.) High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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C-Band Power GaAs FET HEMT Chips fujitsu gaas fet fujitsu hemt GaAs FET HEMT Chips