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DSA00291589.pdf
by Cree
Partial File Text
PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35030F is a
...
gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
DSA00291589.pdf
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User Tagged Keywords
470PF
CGH35030-TB
CGH35030F
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str 6754
str 6754 circuit
STR W 6754