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DSA00291265.pdf
Manufacturer
Chino-Excel Technology
Partial File Text
CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and re
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ECAD Model
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CEH2316