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    DSA00291150.pdf

    • California Eastern Laboratories
    • NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) · HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz ·
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    DSA00291150.pdf preview Download Datasheet

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    NESG2101M05 NESG2101M05-T1-A transistor T1J

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