DSAEDA00026102.pdf
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AUK
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STJ009
N-ch Trench MOSFET
Portable Equipment Application
Features
ï Low drain-source On-resistance:
RDS(on)=72m⦠(Max.) @VGS=-10V, ID=-2.7A
ï Low gate charge: Qg=4.7nC (Typ.)
ï High p
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Original
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