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    DSASW00135449.pdf

    • Central Semiconductor
    • PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Ar
    • Original

    DSASW00135449.pdf preview Download Datasheet

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    1N3070 C 704 diode CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V DIODE R3
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