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    DSASW00135409.pdf

    • PROCESS CP382X Small Signal Transistor NPN - Low VCE(SAT) Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS
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    DSASW00135409.pdf preview

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    cmlt3820g CMPT3820 CXT3820 TRANSISTOR 536
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